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Bi-directional Thyristor
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Bi-directional Thyristor

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Specifications
Parameters
Characteristic
Application

Type

VDRM

IT(RMS)@Ths

ITSM

dv/dt

di/dt

IDRM

TGT

VGT

IH

VTM/ITM

VTO

rT

Rth(j-hs)

Tjm

Outline

 

 

10ms

 

 

 

25℃

125℃

 

 

V

A

KA

V/μs

A/μs

mA

mA

V

mA

V/A

V

℃/W

KS300

500-1800

300

80

2.5

50

50

30

20-200

0.8-2.5

20-200

2.7/450

0.99

1.80

0.055

125

1

KS600

500-1800

600

95

4.2

50

50

40

20-300

0.8-3.0

20-300

2.7/900

0.90

1.02

0.035

125

2

KS800

500-1800

800

85

6.8

50

50

50

20-350

0.8-3.5

20-400

2.7/1200

1.00

0.85

0.032

125

3

KS1000

500-1800

1000

90

6.8

50

50

50

20-350

0.8-3.5

20-400

2.7/1200

1.00

0.85

0.035

125

4

KS1200

500-1800

1200

96

6.8

50

50

50

20-350

0.8-3.5

20-400

2.7/1200

1.00

0.85

0.035

125

5

 

We could not find any corresponding parameters, please add them to the properties table

Note:

1.IGTVGTIH are test values under 25℃ Unless otherwise specified,other parameters in the parameter table are test values under Tjm.

2.I2t=I2tSMxtw/2:tw=bottom width of half-sinusoid current.Under 50Hz,I2t=0.05I2TSM。

3.When working under the current of 60 Hz:ITSM(8.3ms)= ITSM(10ms)×1.066,Tj=Tjm I2T(8.3ms)= I2T(10ms)×0.943,Tj=Tjm

4..Gate lead:white or colcrless    cathode lead(if necessary):red

Feature

1.Distriuted gate design

2.High di/dt capability

3.The equivalent of two thyristor

4.Inverse parallel connect

1.Contactless AC switch

2.Regulation and control AC power

 

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